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| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 11P50 IXTT 11P50 VDSS ID25 RDS(on) = -500 V = -11 A = 0.75 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJ TC = 25C TC = 25C TC = 25C Maximum Ratings -500 -500 20 30 -11 -44 -11 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W C C C C TO-247 AD (IXTH) D (TAB) TO-268 (IXTT) Case Style G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247) 300 1.13/10 Nm/lb.in. 6 4 g g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 100 TJ = 25C TJ = 125C -200 -1 -5.0 V %/K V %/K nA A mA VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 A BVDSS Temperature Coefficient V DS = VGS, ID = -250 A VGS(th) Temperature Coefficient V GS = 20 VDC, VDS = 0 V DS = 0.8 * VDSS V GS = 0 V VGS = -10 V, ID = 0.5 * ID25 RDS(on) Temperature Coefficient 0.75 0.6 %/K (c) 2005 IXYS All rights reserved DS94535J(01/05) IXTH 11P50 IXTT 11P50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 9 4700 V GS = 0 V, VDS = -25 V, f = 1 MHz 430 135 33 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 27 35 35 130 VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 46 92 0.42 (TO-247) 0.25 S 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf QG(on) QGS QGD RthJC RthCS V DS = -10 V; ID = ID25, pulse test pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -3 500 A A A A V ns TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, di/dt = 100 A/s Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTH 11P50 IXTT 11P50 Fig. 1. Output Cha ra cte ristics @ 25 De g. C -12 -10 ID - Amperes -8 -6 -4 -2 0 0 -2 -4 -6 -8 -10 V DS - V o lts Fig. 2. Ex te nde d Output Cha ra cte ristics @ 25 De g. C -24 -20 ID - Amperes VGS= -1 0 V -9 V -8 V -7 V VGS= -10V -9V -8V -16 -12 -8 -4 0 0 -4 -8 -7V -6 V -6V -5V -12 -16 -20 -5 V V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C -12 -10 Fig. 4. RDS(ON ) Normalized to I D 25 Value vs. Junction Temperature 2.5 2.2 RDS(ON) - Normalized 1.9 1.6 1.3 1 0.7 0.4 ID = -11A ID = -5.5A VGS= -10V ID - Amperes -8 -6 -4 -2 0 0 -3 VGS= -10V -9V -8V -7V -6V -5V -6 -9 -12 -15 -18 -50 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade F ig . 5. R D S (O N ) No rm a liz e d to I D 2 5 V a lu e vs. I D 2 .6 VGS = -1 0 V RDS(ON) - Normalized 2 .2 Fig. 6. Input Adm itta nce -18 -15 ID - Amperes -12 -9 -6 -3 0 T J = -40 C 2 5 C 1 25 C 1 .8 1 .4 1 0 .6 0 -5 T J =1 2 5 C T J =2 5 C -1 0 -1 5 ID - Am pe re s -2 0 -2 5 -4 .5 -5 -5 .5 -6 -6.5 V GS - Volts -7 -7.5 (c) 2005 IXYS All rights reserved IXTH 11P50 IXTT 11P50 Fig. 7. Tra nsconducta nce 25 T J = -4 0 C 20 Gfs - Siemens 15 10 5 0 0 -5 -1 0 -1 5 -2 0 ID - Am pe re s -2 5 -30 T J = 2 5 C T J = 1 25 C IS - Amperes 40 30 20 10 0 0 .5 1 1.5 2 2 .5 V SD - Volts 3 3.5 T J =1 2 5 C T J =2 5 C 50 Fig. 8. S ource Curre nt vs. S ource -ToDra in V olta ge Fig. 9. Ga te Cha rge -10 -8 V GS - Volts Fig. 10. Capacitance 10000 Capacitance - pF VDS= -250V ID = -5.5A IG= -1m A Ciss f=1Mhz 1000 Coss -6 -4 -2 Crss 0 0 25 50 75 100 125 Q G - nanoCoulom bs 100 0 -10 -20 VDS - Volts -30 -40 Fig. 14. M a x im um Tra nsie nt The rm a l Re sista nce 1 R(TH)JC - (C/W) 0 .1 0.0 1 1 10 Puls e W idth - m illis ec onds 1 00 1 0 00 |
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